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Device Characterisation for SiC MOSFETs
In this project, you will use the power device analyser to measure SiC MOSFET device characteristics at different temperatures. Then you will investigate the gate charge measurement, together with the gate resistance measurement using a Vector Network Analyser.
Keywords: Wide band-gap semiconductor, SiC MOSFETs, Switching losses, Data sheet, Impedance measurement.
At HPE, different models have been developed for Wide Band Gap (WBG)
semiconductors with superior characteristics compared to traditional Si
devices. Apart from the data sheet information, these devices need to be
characterised individually to capture their real performance in detail, so
that manufacturing tolerances are included. A Power Device Analyser is
used to accurately measure the device characteristics.
In this project, you will first get into the topic by understanding SiC MOSFET
data sheets, the temperature dependency of device parameters, and
the working principle of the Power Device Analyser. Then, you will measure
the device characteristics at different operating temperatures, which may
require an additional thermal connector design (CAD). As a next step, you
will investigate the gate resistance measurement using a Vector Network
Analyser (up to GHz range). In addition, you will investigate and improve
the post-processing script for gate charge measurements. Finally, you will
evaluate the accuracy of your measurement results with data sheets for
the selected devices from different manufacturers.
At HPE, different models have been developed for Wide Band Gap (WBG) semiconductors with superior characteristics compared to traditional Si devices. Apart from the data sheet information, these devices need to be characterised individually to capture their real performance in detail, so that manufacturing tolerances are included. A Power Device Analyser is used to accurately measure the device characteristics. In this project, you will first get into the topic by understanding SiC MOSFET data sheets, the temperature dependency of device parameters, and the working principle of the Power Device Analyser. Then, you will measure the device characteristics at different operating temperatures, which may require an additional thermal connector design (CAD). As a next step, you will investigate the gate resistance measurement using a Vector Network Analyser (up to GHz range). In addition, you will investigate and improve the post-processing script for gate charge measurements. Finally, you will evaluate the accuracy of your measurement results with data sheets for the selected devices from different manufacturers.